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About MEMS
Photoresist strip (non-metal): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Photoresist strip (non-metal)
Batch size
25
Etchant
Solutions and their concentrations.
sulfuric acid/hydrogen peroxide
Material
photoresist (category)
Process duration
40 min
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1
Sides processed
both
Temperature
120 °C
Wafer size
Wafer size
75 mm
100 mm
Equipment
Nonmetal wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 550 µm
Comments:
Doesn't etch silicon, silicon dioxide, silicon nitride, or silicon on insulator.