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About MEMS
G-line develop (OCG 825 35CS): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
G-line develop (OCG 825 35CS)
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
OCG 934
Etch rate
1 µm/min
Material
OCG 825 35CS
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
OCG 825 35CS: 1
Setup time
30 min
Sides processed
either
Temperature
23 °C
Wafer size
Wafer size
100 mm
150 mm
Equipment
SVG-8132CTD Develop Track
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm