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Anodic bonding (without alignment): View
Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Anodic bonding (without alignment)
Process characteristics:
Bonding force
Bonding force
*
N
must be 50 .. 5000 N
50 .. 5000 N
Second substrate side bonded
Second substrate side bonded
*
back
front
Substrate side bonded
Substrate side bonded
*
back
front
Temperature
Maximum temperature the substrate reaches during processing
Temperature
*
°C
Maximum temperature the substrate reaches during processing, must be 20 .. 550 °C
20 .. 550 °C
Voltage
Voltage applied across wafers during bonding
Voltage
*
V
Voltage applied across wafers during bonding, must be 500 .. 1200 V
500 .. 1200 V
Alignment type
Method used to align materials to be bonded.
unaligned
Pressure
Pressure of process chamber during processing
1 atm
Second substrate diameter
10 .. 100 mm
Second substrate geometry
wafer
Second substrate materials
Pyrex (Corning 7740), silicon
Second substrate thickness
200 .. 1000 µm
Wafer size
Wafer size
100 mm
Equipment
EV 501 bonder
Equipment characteristics:
Batch sizes
100 mm: 2
MOS clean
no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm
Comments:
No organic materials permitted.
No metals on non-bonded wafer faces.
Maximum interconnect thickness between bonded pair = 300A.
Customer to provide bonding cross section and estimate of area bonded.
Other metals may be considered on an individual basis.