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About MEMS
Contact flat alignment and exposure: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Contact flat alignment and exposure
Alignment tolerance
Registration of CAD data to features on wafer
2 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
circle
Intensity
Intensity of light source
20 mW/cm/cm
Magnification
1
Sides processed
both
Wavelength
Wavelength of light used during the exposure
365 .. 436 nm
Wafer size
Wafer size
50 mm
75 mm
100 mm
150 mm
Equipment
Karl Suss MA6 Contact Aligner
Equipment characteristics:
Batch sizes
100 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, rectangular
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, indium phosphide, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 800 µm
Comments:
No fine alignment.
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.