Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.05 .. 2 µm
0.05 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrogen, silane, ammonia
Material silicon nitride
Microstructure amorphous
Sides processed either
Uniformity -0.03 .. 0.03
Wafer size
Wafer size
Equipment Oxford Plasmalab PECVD System
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Extra terms
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.