Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low-Stress LPCVD Silicon Nitride
Process characteristics:
Thickness
Thickness*
must be 0.03 .. 2 µm
0.03 .. 2 µm
Allowed materials silicon (category), silicon (single crystal), silicon dioxide on silicon, silicon dioxide, silicon on insulator, polysilicon on silicon dioxide, silicon nitride, silicon oxy-nitride, silicon (doped), silicon germanium, silicon nitride on silicon, silicon on sapphire, polysilicon, silicon dioxide (low temperature), silicon, silicon carbide, quartz (fused silica), silicon nitride on silicon dioxide, quartz (single crystal), silicon dioxide (category), silicon/glass composite, polysilicon on quartz, silicon nitride on quartz
Ambient
Ambient to which substrate is exposed during processing
 dichlorosilane, ammonia
Material silicon nitride
Refractive index 2.2
Residual stress 100 .. 300 MPa
Sides processed both
Temperature 820 °C
Uniformity 0.075
Wafer size
Wafer size
Equipment Furnace : Nitride
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 274 .. 700 µm