Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride RIE
Process characteristics:
Depth
Depth*
must be 0.01 .. 3 µm
0.01 .. 3 µm
Etch rate 0.5 µm/min
Gas O2, Ar, CHF3, CF4
Material silicon nitride
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 3, silicon nitride: 1
Sides processed either
Temperature 20 °C
Uniformity 0.05
Wafer size
Wafer size
Equipment LAM 4520XLe
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat
Wafer holder
Device that holds the wafers during processing.
 electrostatic chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 675 µm